TSM650N15CR RLG Tech Spezifikatioune
Taiwan Semiconductor Corporation - TSM650N15CR RLG technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Taiwan Semiconductor Corporation - TSM650N15CR RLG
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Taiwan Semiconductor | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-PDFN (5x6) | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 4A, 10V | |
| Power Dissipation (Max) | 96W (Tc) | |
| Package / Case | 8-PowerTDFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1829 pF @ 75 V | |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
| Entworf fir Source Voltage (Vdss) | 150 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 24A (Tc) | |
| Basis Produktnummer | TSM650 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Taiwan Semiconductor Corporation TSM650N15CR RLG.
| Produktiounsattriff |  |
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|
 |
|---|---|---|---|---|
| Part Number | TSM650N15CR RLG | TSM650P03CX RFG | TSM650P02CX RFG | TSM680P06CP ROG |
| Hiersteller | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 4A, 10V | 65mOhm @ 4A, 10V | 65mOhm @ 3A, 4.5V | 68mOhm @ 6A, 10V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | 8-PowerTDFN | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs (Max) | ±20V | ±12V | ±10V | ±20V |
| FET Feature | - | - | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Input Capacitance (Ciss) (Max) @ Vds | 1829 pF @ 75 V | 810 pF @ 15 V | 515 pF @ 10 V | 870 pF @ 30 V |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 900mV @ 250µA | 800mV @ 250µA | 2.2V @ 250µA |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V | 6.4 nC @ 4.5 V | 5.1 nC @ 4.5 V | 16.4 nC @ 10 V |
| Power Dissipation (Max) | 96W (Tc) | 1.56W (Tc) | 1.56W (Tc) | 20W (Tc) |
| Serie | - | - | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 24A (Tc) | 4.1A (Tc) | 4.1A (Tc) | 18A (Tc) |
| Entworf fir Source Voltage (Vdss) | 150 V | 30 V | 20 V | 60 V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 2.5V, 10V | 1.8V, 4.5V | 4.5V, 10V |
| Basis Produktnummer | TSM650 | TSM650 | TSM650 | TSM680 |
| FET Typ | N-Channel | P-Channel | P-Channel | P-Channel |
| Supplier Device Package | 8-PDFN (5x6) | SOT-23 | SOT-23 | TO-252, (D-Pak) |
Eroflueden TSM650N15CR RLG PDF DataDhusts an Taiwan Semiconductor Corporation Dokumentatioun fir TSM650N15CR RLG - Taiwan Semiconductor Corporation.
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| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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